IRFL4310PBF
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Infineon Technologies IRFL4310PBF

Manufacturer No:
IRFL4310PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFL4310PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:- 
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number IRFL4310PBF IRFL4315PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V
Current - Continuous Drain (Id) @ 25°C 2.2A (Ta) 2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs - 185mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id - 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs - 19 nC @ 10 V
Vgs (Max) ±20V ±30V
Input Capacitance (Ciss) (Max) @ Vds - 420 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 1W (Ta) 2.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package - SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA

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