IRFL014NPBF
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Infineon Technologies IRFL014NPBF

Manufacturer No:
IRFL014NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFL014NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 55V 1.9A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:190 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-223
Package / Case:TO-261-4, TO-261AA
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Similar Products

Part Number IRFL014NPBF IRFL024NPBF   IRFL014PBF  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 1.9A (Ta) 2.8A (Ta) 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 1.9A, 10V 75mOhm @ 2.8A, 10V 200mOhm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 18.3 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 190 pF @ 25 V 400 pF @ 25 V 300 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 1W (Ta) 1W (Ta) 2W (Ta), 3.1W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SOT-223 SOT-223 SOT-223
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA TO-261-4, TO-261AA

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