IRFIZ34E
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Infineon Technologies IRFIZ34E

Manufacturer No:
IRFIZ34E
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFIZ34E Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 21A TO220AB FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:21A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:42mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):37W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220-FP
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRFIZ34E IRFIZ34G   IRFIZ24E  
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc) 20A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 42mOhm @ 11A, 10V 50mOhm @ 12A, 10V 71mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V 46 nC @ 10 V 20 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 25 V 1200 pF @ 25 V 370 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 37W (Tc) 42W (Tc) 29W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package PG-TO220-FP TO-220-3 PG-TO220-FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack

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