IRFI9Z24N
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Infineon Technologies IRFI9Z24N

Manufacturer No:
IRFI9Z24N
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFI9Z24N Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 55V 9.5A TO220AB FP
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:175mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):29W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220AB Full-Pak
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRFI9Z24N IRFI9Z34N   IRFI9Z24G  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V 60 V
Current - Continuous Drain (Id) @ 25°C 9.5A (Tc) 14A (Tc) 8.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 175mOhm @ 5.4A, 10V 100mOhm @ 7.8A, 10V 280mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V 35 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25 V 620 pF @ 25 V 570 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 29W (Tc) 37W (Tc) 37W (Tc)
Operating Temperature - - -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB Full-Pak TO-220AB Full-Pak TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab

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