IRFI7446GPBF
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Infineon Technologies IRFI7446GPBF

Manufacturer No:
IRFI7446GPBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRFI7446GPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 80A TO220AB FP
Delivery:
Payment:
iso14001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 48A, 10V
Vgs(th) (Max) @ Id:3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3199 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40.5W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB Full-Pak
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRFI7446GPBF IRFI744GPBF   IRFI7440GPBF  
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 450 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 4.9A (Tc) 95A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.3mOhm @ 48A, 10V 630mOhm @ 2.9A, 10V 2.5mOhm @ 57A, 10V
Vgs(th) (Max) @ Id 3.9V @ 100µA 4V @ 250µA 3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 80 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3199 pF @ 25 V 1400 pF @ 25 V 4549 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 40.5W (Tc) 40W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB Full-Pak TO-220-3 TO-220AB Full-Pak
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab TO-220-3 Full Pack

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