IRFI530NPBF
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Infineon Technologies IRFI530NPBF

Manufacturer No:
IRFI530NPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFI530NPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 12A TO220AB FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:110mOhm @ 6.6A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:44 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):41W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB Full-Pak
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRFI530NPBF IRFI540NPBF   IRFI530GPBF  
Manufacturer Infineon Technologies Infineon Technologies Vishay Siliconix
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc) 20A (Tc) 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 6.6A, 10V 52mOhm @ 11A, 10V 160mOhm @ 5.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V 94 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V 1400 pF @ 25 V 670 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 41W (Tc) 54W (Tc) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB Full-Pak TO-220AB Full-Pak TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack, Isolated Tab

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