IRFI4227PBF
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Infineon Technologies IRFI4227PBF

Manufacturer No:
IRFI4227PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFI4227PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 26A TO220AB FP
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:26A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:25mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):46W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB Full-Pak
Package / Case:TO-220-3 Full Pack
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Similar Products

Part Number IRFI4227PBF IRFI4229PBF   IRFI4228PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Not For New Designs Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 250 V 150 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc) 19A (Tc) 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 25mOhm @ 17A, 10V 46mOhm @ 11A, 10V 16mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V 4480 pF @ 25 V 4560 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 46W (Tc) 46W (Tc) 46W (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB Full-Pak TO-220AB TO-220AB Full-Pak
Package / Case TO-220-3 Full Pack TO-220-3 TO-220-3 Full Pack

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