IRFHS8342TR2PBF
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Infineon Technologies IRFHS8342TR2PBF

Manufacturer No:
IRFHS8342TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRFHS8342TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 8.8A PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:16mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:8.7 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:PG-TSDSON-6
Package / Case:6-PowerVDFN
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Similar Products

Part Number IRFHS8342TR2PBF IRFHS8342TRPBF   IRFHS8242TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 25 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 19A (Tc) 8.8A (Ta), 19A (Tc) 9.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V -
Rds On (Max) @ Id, Vgs 16mOhm @ 8.5A, 10V 16mOhm @ 8.5A, 10V 13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.35V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 8.7 nC @ 10 V 8.7 nC @ 10 V 10.4 nC @ 10 V
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 600 pF @ 25 V 600 pF @ 25 V 653 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) - 2.1W (Ta) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PG-TSDSON-6 PG-TSDSON-6 6-PQFN (2x2)
Package / Case 6-PowerVDFN 6-PowerVDFN 6-PowerVDFN

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