Infineon Technologies-IRFHM8363TRPBF - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	11A
Rds On (Max) @ Id, Vgs:	14.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	15nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1165pF @ 10V
Power - Max:	2.7W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-PQFN (3.3x3.3), Power33

Infineon Technologies IRFHM8363TRPBF