Infineon Technologies-IRFHM8334TRPBF-INF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	13A (Ta), 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	9mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	15 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1180 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.7W (Ta), 28W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN-Dual (3.3x3.3), Power33
Package / Case:	8-PowerVDFN

Infineon Technologies IRFHM8334TRPBF-INF