IRFHM830DTR2PBF
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Infineon Technologies IRFHM830DTR2PBF

Manufacturer No:
IRFHM830DTR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRFHM830DTR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 20A PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:4.3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1797 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:PQFN (3x3)
Package / Case:8-VQFN Exposed Pad
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Similar Products

Part Number IRFHM830DTR2PBF IRFHM830DTRPBF   IRFHM830TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 40A (Tc) 20A (Ta), 40A (Tc) 21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V -
Rds On (Max) @ Id, Vgs 4.3mOhm @ 20A, 10V 4.3mOhm @ 20A, 10V 3.8mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA 2.35V @ 50µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 10 V 27 nC @ 10 V 31 nC @ 10 V
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1797 pF @ 25 V 1797 pF @ 25 V 2155 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) - 2.8W (Ta), 37W (Tc) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package PQFN (3x3) PQFN (3x3) PQFN (3x3)
Package / Case 8-VQFN Exposed Pad 8-VQFN Exposed Pad 8-VQFN Exposed Pad

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