Infineon Technologies-IRFHM8235TRPBF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	7.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:	2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:	12 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1040 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	3W (Ta), 30W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (3.3x3.3), Power33
Package / Case:	8-PowerTDFN

Infineon Technologies IRFHM8235TRPBF