Infineon Technologies-IRFHE4250DTRPBF - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	86A, 303A
Rds On (Max) @ Id, Vgs:	2.75mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs:	20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	1735pF @ 13V
Power - Max:	156W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	32-PowerWFQFN
Supplier Device Package:	32-PQFN (6x6)

Infineon Technologies IRFHE4250DTRPBF