Infineon Technologies-IRFH9310TRPBF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	21A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.6mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:	2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	58 nC @ 4.5 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	5250 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	3.1W (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PQFN (5x6)
Package / Case:	8-PowerVDFN

Infineon Technologies IRFH9310TRPBF