IRFH8318TR2PBF
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Infineon Technologies IRFH8318TR2PBF

Manufacturer No:
IRFH8318TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRFH8318TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 21A 5X6 PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:3180 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number IRFH8318TR2PBF IRFH8318TRPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 120A (Tc) 27A (Ta), 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V
Rds On (Max) @ Id, Vgs 3.1mOhm @ 20A, 10V 3.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 41 nC @ 10 V
Vgs (Max) - ±20V
Input Capacitance (Ciss) (Max) @ Vds 3180 pF @ 10 V 3180 pF @ 10 V
FET Feature - -
Power Dissipation (Max) - 3.6W (Ta), 59W (Tc)
Operating Temperature - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package PQFN (5x6) PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN

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