IRFH7914TR2PBF
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Infineon Technologies IRFH7914TR2PBF

Manufacturer No:
IRFH7914TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRFH7914TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 15A PQFN56
Delivery:
Payment:
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iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:8.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1160 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerTDFN
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Similar Products

Part Number IRFH7914TR2PBF IRFH7914TRPBF   IRFH7934TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 35A (Tc) 15A (Ta), 35A (Tc) 24A (Ta), 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V -
Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V 8.7mOhm @ 14A, 10V 3.5mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.35V @ 25µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 12 nC @ 4.5 V 30 nC @ 4.5 V
Vgs (Max) - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 15 V 1160 pF @ 15 V 3100 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) - 3.1W (Ta) -
Operating Temperature - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerTDFN 8-PowerTDFN 8-PowerTDFN

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