IRFH5303TRPBF
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Infineon Technologies IRFH5303TRPBF

Manufacturer No:
IRFH5303TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFH5303TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 23A/82A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:23A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 49A, 10V
Vgs(th) (Max) @ Id:2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:41 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2190 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 46W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
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Part Number IRFH5303TRPBF IRFH5304TRPBF   IRFH8303TRPBF   IRFH5306TRPBF   IRFH5300TRPBF   IRFH5301TRPBF   IRFH5302TRPBF   IRFH5303TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Active Obsolete Active Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 82A (Tc) 22A (Ta), 79A (Tc) 43A (Ta), 100A (Tc) 15A (Ta), 44A (Tc) 40A (Ta), 100A (Tc) 35A (Ta), 100A (Tc) 32A (Ta), 100A (Tc) 23A (Ta), 82A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 49A, 10V 4.5mOhm @ 47A, 10V 1.1mOhm @ 50A, 10V 8.1mOhm @ 15A, 10V 1.4mOhm @ 50A, 10V 1.85mOhm @ 50A, 10V 2.1mOhm @ 50A, 10V 4.2mOhm @ 49A, 10V
Vgs(th) (Max) @ Id 2.35V @ 50µA 2.35V @ 50µA 2.2V @ 150µA 2.35V @ 25µA 2.35V @ 150µA 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 41 nC @ 10 V 41 nC @ 10 V 179 nC @ 10 V 12 nC @ 4.5 V 120 nC @ 10 V 77 nC @ 10 V 76 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2190 pF @ 15 V 2360 pF @ 10 V 7736 pF @ 24 V 1125 pF @ 15 V 7200 pF @ 15 V 5114 pF @ 15 V 4400 pF @ 15 V 2190 pF @ 15 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 46W (Tc) 3.6W (Ta), 46W (Tc) 3.7W (Ta), 156W (Tc) 3.6W (Ta), 26W (Tc) 3.6W (Ta), 250W (Tc) 3.6W (Ta), 110W (Tc) 3.6W (Ta), 100W (Tc) 3.6W (Ta), 46W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) Single Die 8-PQFN (5x6) PQFN (5x6) Single Die PQFN (5x6) Single Die 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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