IRFH5302TRPBF
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Infineon Technologies IRFH5302TRPBF

Manufacturer No:
IRFH5302TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFH5302TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 32A/100A PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6) Single Die
Package / Case:8-PowerVDFN
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Similar Products

Part Number IRFH5302TRPBF IRFH5304TRPBF   IRFH5306TRPBF   IRFH5303TRPBF   IRFH5300TRPBF   IRFH5301TRPBF   IRFH5302TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete Obsolete Active Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) 22A (Ta), 79A (Tc) 15A (Ta), 44A (Tc) 23A (Ta), 82A (Tc) 40A (Ta), 100A (Tc) 35A (Ta), 100A (Tc) 32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 4.5mOhm @ 47A, 10V 8.1mOhm @ 15A, 10V 4.2mOhm @ 49A, 10V 1.4mOhm @ 50A, 10V 1.85mOhm @ 50A, 10V 2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA 2.35V @ 50µA 2.35V @ 25µA 2.35V @ 50µA 2.35V @ 150µA 2.35V @ 100µA 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V 41 nC @ 10 V 12 nC @ 4.5 V 41 nC @ 10 V 120 nC @ 10 V 77 nC @ 10 V 76 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 15 V 2360 pF @ 10 V 1125 pF @ 15 V 2190 pF @ 15 V 7200 pF @ 15 V 5114 pF @ 15 V 4400 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 100W (Tc) 3.6W (Ta), 46W (Tc) 3.6W (Ta), 26W (Tc) 3.6W (Ta), 46W (Tc) 3.6W (Ta), 250W (Tc) 3.6W (Ta), 110W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PQFN (5x6) Single Die 8-PQFN (5x6) PQFN (5x6) Single Die 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) Single Die PQFN (5x6) Single Die
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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