IRFH5302TR2PBF
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Infineon Technologies IRFH5302TR2PBF

Manufacturer No:
IRFH5302TR2PBF
Manufacturer:
Infineon Technologies
Package:
Cut Tape (CT)
Datasheet:
IRFH5302TR2PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 32A 5X6 PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:32A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:2.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:76 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:4400 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PQFN (5x6) Single Die
Package / Case:8-PowerVDFN
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Similar Products

Part Number IRFH5302TR2PBF IRFH5302TRPBF   IRFH5306TR2PBF   IRFH5304TR2PBF   IRFH5303TR2PBF   IRFH5301TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 100A (Tc) 32A (Ta), 100A (Tc) 15A (Ta), 44A (Tc) 22A (Ta), 79A (Tc) 23A (Ta), 82A (Tc) 35A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 4.5V, 10V - - 4.5V, 10V -
Rds On (Max) @ Id, Vgs 2.1mOhm @ 50A, 10V 2.1mOhm @ 50A, 10V 8.1mOhm @ 15A, 10V 4.5mOhm @ 47A, 10V 4.2mOhm @ 49A, 10V 1.85mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.35V @ 100µA 2.35V @ 100µA 2.35V @ 25µA 2.35V @ 50µA 2.35V @ 50µA 2.35V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V 76 nC @ 10 V 12 nC @ 4.5 V 41 nC @ 10 V 41 nC @ 10 V 77 nC @ 10 V
Vgs (Max) - ±20V - - ±20V -
Input Capacitance (Ciss) (Max) @ Vds 4400 pF @ 15 V 4400 pF @ 15 V 1125 pF @ 15 V 2360 pF @ 10 V 2190 pF @ 15 V 5114 pF @ 15 V
FET Feature - - - - - -
Power Dissipation (Max) - 3.6W (Ta), 100W (Tc) - - 3.6W (Ta), 46W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - - -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package PQFN (5x6) Single Die PQFN (5x6) Single Die PQFN (5x6) Single Die 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) Single Die
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN

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