IRFH5206TRPBF
  • Share:

Infineon Technologies IRFH5206TRPBF

Manufacturer No:
IRFH5206TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRFH5206TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 16A/89A 8PQFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:16A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2490 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.6W (Ta), 100W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-PQFN (5x6)
Package / Case:8-PowerVDFN
0 Remaining View Similar

In Stock

-
32

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFH5206TRPBF IRFH5406TRPBF   IRFH5306TRPBF   IRFH5207TRPBF   IRFH5006TRPBF   IRFH5106TRPBF   IRFH5204TRPBF   IRFH5206TR2PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Active Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 30 V 75 V 60 V 60 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 89A (Tc) 11A (Ta), 40A (Tc) 15A (Ta), 44A (Tc) 13A (Ta), 71A (Tc) 21A (Ta), 100A (Tc) 21A (Ta), 100A (Tc) 22A (Ta), 100A (Tc) 16A (Ta), 89A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V 10V 10V 10V 10V -
Rds On (Max) @ Id, Vgs 6.7mOhm @ 50A, 10V 14.4mOhm @ 24A, 10V 8.1mOhm @ 15A, 10V 9.6mOhm @ 43A, 10V 4.1mOhm @ 50A, 10V 5.6mOhm @ 50A, 10V 4.3mOhm @ 50A, 10V 6.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 50µA 2.35V @ 25µA 4V @ 100µA 4V @ 150µA 4V @ 250µA 4V @ 100µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V 35 nC @ 10 V 12 nC @ 4.5 V 59 nC @ 10 V 100 nC @ 10 V 75 nC @ 10 V 65 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2490 pF @ 25 V 1256 pF @ 25 V 1125 pF @ 15 V 2474 pF @ 25 V 4175 pF @ 30 V 3090 pF @ 25 V 2460 pF @ 25 V 2490 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 3.6W (Ta), 100W (Tc) 3.6W (Ta), 46W (Tc) 3.6W (Ta), 26W (Tc) 3.6W (Ta), 105W (Tc) 3.6W (Ta), 156W (Tc) 3.6W (Ta), 114W (Tc) 3.6W (Ta), 105W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) Single Die 8-PQFN (5x6) 8-PQFN (5x6) 8-PQFN (5x6) PQFN (5x6) 8-PQFN (5x6)
Package / Case 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerVDFN 8-PowerTDFN 8-PowerVDFN 8-VQFN Exposed Pad 8-PowerVDFN

Related Product By Categories

IRF6894MTRPBF
IRF6894MTRPBF
Infineon Technologies
IRF6894 - 12V-300V N-CHANNEL POW
SIR422DP-T1-GE3
SIR422DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 40V 40A PPAK SO-8
STL42P4LLF6
STL42P4LLF6
STMicroelectronics
MOSFET P-CH 40V 42A POWERFLAT
SISA26DN-T1-GE3
SISA26DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 60A PPAK1212-8S
CSD18513Q5A
CSD18513Q5A
Texas Instruments
MOSFET N-CH 40V 124A 8VSON
PJA3461_R1_00001
PJA3461_R1_00001
Panjit International Inc.
SOT-23, MOSFET
STD12N60M2
STD12N60M2
STMicroelectronics
MOSFET N-CHANNEL 600V 9A DPAK
IRF7478TRPBF
IRF7478TRPBF
Infineon Technologies
MOSFET N-CH 60V 7A 8SO
ZXMN6A08E6TC
ZXMN6A08E6TC
Diodes Incorporated
MOSFET N-CH 60V 2.8A SOT26
IPP070N06L G
IPP070N06L G
Infineon Technologies
MOSFET N-CH 60V 80A TO220-3
SI4110DY-T1-GE3
SI4110DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 80V 17.3A 8SO
TPC8036-H(TE12L,QM
TPC8036-H(TE12L,QM
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 18A 8SOP

Related Product By Brand

ESD3V3U1U02LSE6327XTSA1
ESD3V3U1U02LSE6327XTSA1
Infineon Technologies
TVS DIODE 3.3VWM 28VC TSSLP-2-1
D1800N43TVFXPSA1
D1800N43TVFXPSA1
Infineon Technologies
DIODE GEN PURP 4.3KV 1800A
IPD530N15N3GBTMA1
IPD530N15N3GBTMA1
Infineon Technologies
MOSFET N-CH 150V 21A TO252-3
FF450R07ME4BOSA1
FF450R07ME4BOSA1
Infineon Technologies
GBT MODULE 650V 450A
IRG4IBC30KDPBF
IRG4IBC30KDPBF
Infineon Technologies
IRG4IBC30 - DISCRETE IGBT WITH A
ITS436L2SHKSA1
ITS436L2SHKSA1
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO220-5
BTS462TXT
BTS462TXT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
IR3840WMTR1PBF
IR3840WMTR1PBF
Infineon Technologies
IC REG BUCK ADJUSTABLE 12A PQFN
CY8C23433-24PVXI
CY8C23433-24PVXI
Infineon Technologies
IC MCU 8BIT 8KB FLASH 28SSOP
MB90867ESPMC-G-418-JNE1
MB90867ESPMC-G-418-JNE1
Infineon Technologies
IC MCU 16BIT 128KB MROM 100LQFP
CY7C1472V25-250BZC
CY7C1472V25-250BZC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA
CY7C1481BV33-133BZXC
CY7C1481BV33-133BZXC
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA