Infineon Technologies-IRFH4209DTRPBF - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	25 V
Current - Continuous Drain (Id) @ 25°C:	44A (Ta), 260A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.1mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2.1V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:	74 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4620 pF @ 13 V
FET Feature:	-
Power Dissipation (Max):	3.5W (Ta), 125W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PQFN (5x6)
Package / Case:	8-PowerTDFN

Infineon Technologies IRFH4209DTRPBF