IRFB4610PBF
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Infineon Technologies IRFB4610PBF

Manufacturer No:
IRFB4610PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4610PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 73A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4610PBF IRFB4615PBF   IRFB4620PBF   IRFB4710PBF   IRFB4110PBF   IRFB4310PBF   IRFB4410PBF   IRFB4510PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 150 V 200 V 100 V 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 35A (Tc) 25A (Tc) 75A (Tc) 120A (Tc) 130A (Tc) 88A (Tc) 62A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V 39mOhm @ 21A, 10V 72.5mOhm @ 15A, 10V 14mOhm @ 45A, 10V 4.5mOhm @ 75A, 10V 7mOhm @ 75A, 10V 10mOhm @ 58A, 10V 13.5mOhm @ 37A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 5V @ 100µA 5V @ 100µA 5.5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 150µA 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 26 nC @ 10 V 38 nC @ 10 V 170 nC @ 10 V 210 nC @ 10 V 250 nC @ 10 V 180 nC @ 10 V 87 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 1750 pF @ 50 V 1710 pF @ 50 V 6160 pF @ 25 V 9620 pF @ 50 V 7670 pF @ 50 V 5150 pF @ 50 V 3180 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 190W (Tc) 144W (Tc) 144W (Tc) 3.8W (Ta), 200W (Tc) 370W (Tc) 300W (Tc) 200W (Tc) 140W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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