IRFB4610
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Infineon Technologies IRFB4610

Manufacturer No:
IRFB4610
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4610 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 73A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:73A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:14mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:140 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3550 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):190W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4610 IRFB4410  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 73A (Tc) 96A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 14mOhm @ 44A, 10V 10mOhm @ 58A, 10V
Vgs(th) (Max) @ Id 4V @ 100µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V 180 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3550 pF @ 50 V 5150 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 190W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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