IRFB4410ZGPBF
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Infineon Technologies IRFB4410ZGPBF

Manufacturer No:
IRFB4410ZGPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4410ZGPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 97A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:97A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:9mOhm @ 58A, 10V
Vgs(th) (Max) @ Id:4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4820 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):230W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4410ZGPBF IRFB4410ZPBF   IRFB4310ZGPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Not For New Designs Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 97A (Tc) 97A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 58A, 10V 9mOhm @ 58A, 10V 6mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 150µA 4V @ 150µA 4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 10 V 120 nC @ 10 V 170 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4820 pF @ 50 V 4820 pF @ 50 V 6860 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 230W (Tc) 230W (Tc) 250W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

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