IRFB4227PBF
  • Share:

Infineon Technologies IRFB4227PBF

Manufacturer No:
IRFB4227PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4227PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 65A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:65A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:24mOhm @ 46A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:98 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:4600 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):330W (Tc)
Operating Temperature:-40°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.78
253

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFB4227PBF IRFB4228PBF   IRFB4229PBF   IRFB4127PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 150 V 250 V 200 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc) 83A (Tc) 46A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 24mOhm @ 46A, 10V 15mOhm @ 33A, 10V 46mOhm @ 26A, 10V 20mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 98 nC @ 10 V 107 nC @ 10 V 110 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4600 pF @ 25 V 4530 pF @ 25 V 4560 pF @ 25 V 5380 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 330W (Tc) 330W (Tc) 330W (Tc) 375W (Tc)
Operating Temperature -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

IRFH8334TRPBF
IRFH8334TRPBF
Infineon Technologies
MOSFET N-CH 30V 14A/44A PQFN
STW8N90K5
STW8N90K5
STMicroelectronics
MOSFET N-CH 900V 8A TO247-3
APT5020BVFRG
APT5020BVFRG
Microchip Technology
MOSFET N-CH 500V 26A TO247
DMG302PU-13
DMG302PU-13
Diodes Incorporated
MOSFET P-CH 25V 170MA SOT23
FQD5N60CTM-WS
FQD5N60CTM-WS
onsemi
MOSFET N-CH 600V 2.8A DPAK
IRFR1N60ATRL
IRFR1N60ATRL
Vishay Siliconix
MOSFET N-CH 600V 1.4A DPAK
FQB5N30TM
FQB5N30TM
onsemi
MOSFET N-CH 300V 5.4A D2PAK
BSA223SP
BSA223SP
Infineon Technologies
MOSFET P-CH 20V 390MA SC75
NTMFS4839NT3G
NTMFS4839NT3G
onsemi
MOSFET N-CH 30V 9.5A/64A 5DFN
FQU7P06TU_NB82048
FQU7P06TU_NB82048
onsemi
MOSFET P-CH 60V 5.4A IPAK
IPD06P004NSAUMA1
IPD06P004NSAUMA1
Infineon Technologies
MOSFET P-CH 60V 16.4A TO252
R6520ENJTL
R6520ENJTL
Rohm Semiconductor
MOSFET N-CH 650V 20A LPTS

Related Product By Brand

XC164CM U CAN
XC164CM U CAN
Infineon Technologies
XC164CM EVAL BRD
IPD50R950CEAUMA1
IPD50R950CEAUMA1
Infineon Technologies
CONSUMER
IRFZ46ZLPBF
IRFZ46ZLPBF
Infineon Technologies
MOSFET N-CH 55V 51A TO262
BSS806NL6327HTSA1
BSS806NL6327HTSA1
Infineon Technologies
MOSFET N-CH 20V 2.3A SOT23-3
ICE1PCS01HKLA1
ICE1PCS01HKLA1
Infineon Technologies
IC PFC CTRLR CCM 133KHZ 8DIP
BTS612N1E3128ANTMA1
BTS612N1E3128ANTMA1
Infineon Technologies
BUFFER/INVERTER PERIPHL DRIVER
CY29973AXIT
CY29973AXIT
Infineon Technologies
IC CLK ZDB 12OUT 125MHZ 52TQFP
CY89697BPFM-G-106-BNDE1
CY89697BPFM-G-106-BNDE1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90025FPMT-GS-260E1
MB90025FPMT-GS-260E1
Infineon Technologies
IC MCU 120LQFP
MB90922NCSPMC-GS-200E1
MB90922NCSPMC-GS-200E1
Infineon Technologies
IC MCU 16BIT 256KB MROM 120LQFP
CY91F054PMC-GS-UJE1
CY91F054PMC-GS-UJE1
Infineon Technologies
IC MCU 144LQFP
CYW43340HKUBGT
CYW43340HKUBGT
Infineon Technologies
IC RF TXRX+MCU BLUTOOTH 141UFBGA