IRFB4137PBF
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Infineon Technologies IRFB4137PBF

Manufacturer No:
IRFB4137PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4137PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 300V 38A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):300 V
Current - Continuous Drain (Id) @ 25°C:38A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:69mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5168 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):341W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4137PBF IRFB4127PBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 200 V
Current - Continuous Drain (Id) @ 25°C 38A (Tc) 76A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 69mOhm @ 24A, 10V 20mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 150 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5168 pF @ 50 V 5380 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 341W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220AB
Package / Case TO-220-3 TO-220-3

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