IRFB4127PBF
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Infineon Technologies IRFB4127PBF

Manufacturer No:
IRFB4127PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4127PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 76A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:20mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5380 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):375W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4127PBF IRFB4227PBF   IRFB4137PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V 300 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) 65A (Tc) 38A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 20mOhm @ 44A, 10V 24mOhm @ 46A, 10V 69mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 98 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±20V ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5380 pF @ 50 V 4600 pF @ 25 V 5168 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 375W (Tc) 330W (Tc) 341W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -40°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3

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