IRFB4110PBF
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Infineon Technologies IRFB4110PBF

Manufacturer No:
IRFB4110PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB4110PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 120A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:210 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9620 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):370W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB4110PBF IRFB4410PBF   IRFB4510PBF   IRFB4610PBF   IRFB4115PBF   IRFB4710PBF   IRFB4310PBF   IRFB4110GPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Active Active Active Active Active Last Time Buy
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V 150 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 88A (Tc) 62A (Tc) 73A (Tc) 104A (Tc) 75A (Tc) 130A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 75A, 10V 10mOhm @ 58A, 10V 13.5mOhm @ 37A, 10V 14mOhm @ 44A, 10V 11mOhm @ 62A, 10V 14mOhm @ 45A, 10V 7mOhm @ 75A, 10V 4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 150µA 4V @ 100µA 4V @ 100µA 5V @ 250µA 5.5V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 210 nC @ 10 V 180 nC @ 10 V 87 nC @ 10 V 140 nC @ 10 V 120 nC @ 10 V 170 nC @ 10 V 250 nC @ 10 V 210 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9620 pF @ 50 V 5150 pF @ 50 V 3180 pF @ 50 V 3550 pF @ 50 V 5270 pF @ 50 V 6160 pF @ 25 V 7670 pF @ 50 V 9620 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 370W (Tc) 200W (Tc) 140W (Tc) 190W (Tc) 380W (Tc) 3.8W (Ta), 200W (Tc) 300W (Tc) 370W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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