IRFB31N20DPBF
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Infineon Technologies IRFB31N20DPBF

Manufacturer No:
IRFB31N20DPBF
Manufacturer:
Infineon Technologies
Package:
Bulk
Datasheet:
IRFB31N20DPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 200V 31A TO220AB
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2370 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 200W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB31N20DPBF IRFB38N20DPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 31A (Tc) 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V 54mOhm @ 26A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 10 V 91 nC @ 10 V
Vgs (Max) ±30V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2370 pF @ 25 V 2900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 200W (Tc) 3.8W (Ta), 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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