IRFB3004GPBF
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Infineon Technologies IRFB3004GPBF

Manufacturer No:
IRFB3004GPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB3004GPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 195A TO220AB
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75mOhm @ 195A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):380W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number IRFB3004GPBF IRFB3004PBF   IRFB3006GPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.75mOhm @ 195A, 10V 1.75mOhm @ 195A, 10V 2.5mOhm @ 170A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 25 V 9200 pF @ 25 V 8970 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 380W (Tc) 380W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

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