IRFB3004GPBF
  • Share:

Infineon Technologies IRFB3004GPBF

Manufacturer No:
IRFB3004GPBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRFB3004GPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 195A TO220AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:195A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.75mOhm @ 195A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:240 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9200 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):380W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

-
171

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRFB3004GPBF IRFB3004PBF   IRFB3006GPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Not For New Designs
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V 60 V
Current - Continuous Drain (Id) @ 25°C 195A (Tc) 195A (Tc) 195A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.75mOhm @ 195A, 10V 1.75mOhm @ 195A, 10V 2.5mOhm @ 170A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 240 nC @ 10 V 240 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9200 pF @ 25 V 9200 pF @ 25 V 8970 pF @ 50 V
FET Feature - - -
Power Dissipation (Max) 380W (Tc) 380W (Tc) 375W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

BSC052N03LSATMA1
BSC052N03LSATMA1
Infineon Technologies
MOSFET N-CH 30V 17A/57A TDSON
NP80N04NHE-S18-AY
NP80N04NHE-S18-AY
Renesas Electronics America Inc
MOSFET N-CH 40V 80A TO262
IXFH34N65X3
IXFH34N65X3
IXYS
MOSFET 34A 650V X3 TO247
NVH4L020N120SC1
NVH4L020N120SC1
onsemi
SICFET N-CH 1200V 102A TO247
SI7454FDP-T1-RE3
SI7454FDP-T1-RE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET POW
FCD900N60Z
FCD900N60Z
onsemi
MOSFET N-CH 600V 4.5A TO252
AOB4S60L
AOB4S60L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 600V 4A TO263
BUK9225-55A,118
BUK9225-55A,118
Nexperia USA Inc.
MOSFET N-CH 55V 43A DPAK
IXFT9N80Q
IXFT9N80Q
IXYS
MOSFET N-CH 800V 9A TO268
SI7380ADP-T1-E3
SI7380ADP-T1-E3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
FDD8445-F085P
FDD8445-F085P
onsemi
MOSFET N-CH 40V 50A TO252
MCH6448-TL-H
MCH6448-TL-H
onsemi
MOSFET N-CH 20V 8A 6MCPH

Related Product By Brand

IDW16G65C5XKSA1
IDW16G65C5XKSA1
Infineon Technologies
DIODE SCHOTTKY 650V 16A TO247-3
SP370251160XTMA3
SP370251160XTMA3
Infineon Technologies
SP370251160 - XENSIV - INTEGRATE
SPN04N60S5
SPN04N60S5
Infineon Technologies
MOSFET N-CH 600V 800MA SOT223-4
IR2167PBF
IR2167PBF
Infineon Technologies
IC PFC/BALLAST CNTRL 47KHZ 20DIP
CHL8212-00CRT
CHL8212-00CRT
Infineon Technologies
IC REG CTRLR GDDR 2OUT 28QFN
CY9AF315MAPMC-G-MNE2
CY9AF315MAPMC-G-MNE2
Infineon Technologies
IC MCU 32BIT 384KB FLASH 80LQFP
MB90022PF-GS-350
MB90022PF-GS-350
Infineon Technologies
IC MCU 16BIT 100QFP
MB90F546GPFR-G-B
MB90F546GPFR-G-B
Infineon Technologies
IC MCU 16BIT 256KB FLASH 100QFP
MB9BF218THPMC-GK7E1
MB9BF218THPMC-GK7E1
Infineon Technologies
IC MCU 32BIT 1MB FLASH 176LQFP
CY7C4251-15AXCT
CY7C4251-15AXCT
Infineon Technologies
IC SYNC FIFO MEM 8KX9 32-TQFP
CY7C1911KV18-250BZXC
CY7C1911KV18-250BZXC
Infineon Technologies
IC SRAM 18MBIT PARALLEL 165FBGA
S29PL032J60BFW123
S29PL032J60BFW123
Infineon Technologies
IC FLASH 32MBIT PARALLEL 48FBGA