IRF9Z34NSTRR
  • Share:

Infineon Technologies IRF9Z34NSTRR

Manufacturer No:
IRF9Z34NSTRR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF9Z34NSTRR Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 55V 19A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:19A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:100mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:620 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 68W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
78

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF9Z34NSTRR IRF9Z34STRR   IRF9Z24NSTRR  
Manufacturer Infineon Technologies Vishay Siliconix Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 60 V 55 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 18A (Tc) 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 10A, 10V 140mOhm @ 11A, 10V 175mOhm @ 7.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 34 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 620 pF @ 25 V 1100 pF @ 25 V 350 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 3.8W (Ta), 68W (Tc) 3.7W (Ta), 88W (Tc) 3.8W (Ta), 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package D2PAK D²PAK (TO-263) D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRFU9210PBF
IRFU9210PBF
Vishay Siliconix
MOSFET P-CH 200V 1.9A TO251AA
UPA2749UT1A-E1-AY
UPA2749UT1A-E1-AY
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
FDS6299S
FDS6299S
Fairchild Semiconductor
MOSFET N-CH 30V 21A 8SOIC
CSD18511KTTT
CSD18511KTTT
Texas Instruments
MOSFET N-CH 40V 110A/194A DDPAK
IXTP60N20T
IXTP60N20T
IXYS
MOSFET N-CH 200V 60A TO220AB
FCPF150N65F
FCPF150N65F
onsemi
MOSFET N-CH 650V 14.9A TO220F
AO6402A
AO6402A
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 7.5A 6TSOP
AO5404E
AO5404E
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 20V 500MA SC89-3
AOB270AL
AOB270AL
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 75V 21.5A/140A TO263
NTD18N06-001
NTD18N06-001
onsemi
MOSFET N-CH 60V 18A IPAK
IRF6729MTR1PBF
IRF6729MTR1PBF
Infineon Technologies
MOSFET N-CH 30V 31A DIRECTFET
R6011ENJTL
R6011ENJTL
Rohm Semiconductor
MOSFET N-CH 600V 11A LPTS

Related Product By Brand

BAR63-02LE6327
BAR63-02LE6327
Infineon Technologies
PIN DIODE, 50V V(BR)
BSC020N03LSGATMA1
BSC020N03LSGATMA1
Infineon Technologies
MOSFET N-CH 30V 28A/100A TDSON
IRF7807VTR
IRF7807VTR
Infineon Technologies
MOSFET N-CH 30V 8.3A 8SO
62-0063PBF
62-0063PBF
Infineon Technologies
MOSFET N-CH 12V 15A 8SO
SPP11N60CFDXKSA1
SPP11N60CFDXKSA1
Infineon Technologies
MOSFET N-CH 650V 11A TO220-3
IPD800N06NGBTMA1
IPD800N06NGBTMA1
Infineon Technologies
MOSFET N-CH 60V 16A TO252-3
IRF6674TR1PBF
IRF6674TR1PBF
Infineon Technologies
MOSFET N-CH 60V 13.4A DIRECTFET
IR1176S
IR1176S
Infineon Technologies
IC GATE DRVR LOW-SIDE 20SSOP
SRF 55V02P MCC2
SRF 55V02P MCC2
Infineon Technologies
IC RFID TRANSP 13.56MHZ MCC2-2-1
CY23FP12OXIT
CY23FP12OXIT
Infineon Technologies
IC CLK ZDB 12OUT 200MHZ 28SSOP
CY88155PFT-G-112-JN-EFE1
CY88155PFT-G-112-JN-EFE1
Infineon Technologies
IC CLOCK GENERATOR EMI 8TSSOP
CY7C1512JV18-267BZI
CY7C1512JV18-267BZI
Infineon Technologies
IC SRAM 72MBIT PARALLEL 165FBGA