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| Part Number | IRF9Z34NSPBF | IRF9Z34SPBF | IRF9Z24NSPBF | IRF9Z34NLPBF | IRF9Z34NPBF |
|---|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Vishay Siliconix | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Status | Discontinued at Digi-Key | Active | Discontinued at Digi-Key | Active | Active |
| FET Type | P-Channel | P-Channel | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 60 V | 55 V | 55 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) | 18A (Tc) | 12A (Tc) | 19A (Tc) | 19A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 10V | 140mOhm @ 11A, 10V | 175mOhm @ 7.2A, 10V | 100mOhm @ 10A, 10V | 100mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V | 34 nC @ 10 V | 19 nC @ 10 V | 35 nC @ 10 V | 35 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 25 V | 1100 pF @ 25 V | 350 pF @ 25 V | 620 pF @ 25 V | 620 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 3.8W (Ta), 68W (Tc) | 3.7W (Ta), 88W (Tc) | 3.8W (Ta), 45W (Tc) | 3.8W (Ta), 68W (Tc) | 68W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole | Through Hole |
| Supplier Device Package | D2PAK | D²PAK (TO-263) | D2PAK | TO-262 | TO-220AB |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-220-3 |
