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| Part Number | IRF9Z24NS | IRF9Z24S | IRF9Z24NL |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
| Product Status | Obsolete | Obsolete | Obsolete |
| FET Type | P-Channel | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 55 V | 60 V | 55 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) | 11A (Tc) | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V | 280mOhm @ 6.6A, 10V | 175mOhm @ 7.2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | 19 nC @ 10 V | 19 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 570 pF @ 25 V | 350 pF @ 25 V |
| FET Feature | - | - | - |
| Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | 3.7W (Ta), 60W (Tc) | 3.8W (Ta), 45W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Through Hole |
| Supplier Device Package | D2PAK | D²PAK (TO-263) | TO-262 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA |
