IRF9952
  • Share:

Infineon Technologies IRF9952

Manufacturer No:
IRF9952
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF9952 Datasheet
ECAD Model:
-
Description:
MOSFET N/P-CH 30V 8-SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:3.5A, 2.3A
Rds On (Max) @ Id, Vgs:100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:190pF @ 15V
Power - Max:2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
0 Remaining View Similar

In Stock

-
158

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF9952 IRF9953   IRF9956  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete
FET Type N and P-Channel 2 P-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 3.5A, 2.3A 2.3A 3.5A
Rds On (Max) @ Id, Vgs 100mOhm @ 2.2A, 10V 250mOhm @ 1A, 10V 100mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V 12nC @ 10V 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V 190pF @ 15V 190pF @ 15V
Power - Max 2W 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO

Related Product By Categories

FDY1002PZ
FDY1002PZ
onsemi
MOSFET 2P-CH 20V 830MA SOT563F
APTM20AM04FG
APTM20AM04FG
Microchip Technology
MOSFET 2N-CH 200V 372A SP6
FDS9933
FDS9933
Fairchild Semiconductor
P-CHANNEL POWER MOSFET
HUF75639S3ST_Q
HUF75639S3ST_Q
Fairchild Semiconductor
TRANS MOSFET N-CH 100V 56A 3PIN(
FDS9934C
FDS9934C
onsemi
MOSFET N/P-CH 20V 6.5A/5A 8SOIC
IPG20N06S2L65ATMA1
IPG20N06S2L65ATMA1
Infineon Technologies
MOSFET 2N-CH 55V 20A TDSON-8-4
FDS6975
FDS6975
onsemi
MOSFET 2P-CH 30V 6A 8SOIC
DMN63D8LV-7
DMN63D8LV-7
Diodes Incorporated
MOSFET 2N-CH 30V 0.26A SOT563
FDD9407
FDD9407
Fairchild Semiconductor
N CHANNEL POWER TRENCH MOSFET,
SI4953ADY-T1-E3
SI4953ADY-T1-E3
Vishay Siliconix
MOSFET 2P-CH 30V 3.7A 8-SOIC
UPA677TB-T1-A
UPA677TB-T1-A
Renesas Electronics America Inc
MOSFET 2N-CH 20V 0.35A SC-88
EM6M1T2R
EM6M1T2R
Rohm Semiconductor
MOSFET N/P-CH 30V/20V EMT6

Related Product By Brand

BAT165E6327HTSA1
BAT165E6327HTSA1
Infineon Technologies
DIODE SCHOTTKY 40V 750MA SOD323
BC857SE6327BTSA1
BC857SE6327BTSA1
Infineon Technologies
TRANS 2PNP 45V 0.1A SOT363
BFS17WH6327XTSA1
BFS17WH6327XTSA1
Infineon Technologies
RF TRANS NPN 15V 1.4GHZ SOT323-3
FP150R12KT4PBPSA1
FP150R12KT4PBPSA1
Infineon Technologies
IGBT MODULE 1200V 150A
IKA15N65ET6XKSA2
IKA15N65ET6XKSA2
Infineon Technologies
IGBT TRENCH 650V 17A TO220-3FP
IRGSL15B60KDPBF
IRGSL15B60KDPBF
Infineon Technologies
IGBT 600V 31A 208W TO262
IR2109PBF
IR2109PBF
Infineon Technologies
IC GATE DRVR HALF-BRIDGE 8DIP
CY62148ELL-45ZSXIT
CY62148ELL-45ZSXIT
Infineon Technologies
IC SRAM 4MBIT PARALLEL 32TSOP II
CY7C1011G30-12ZSXE
CY7C1011G30-12ZSXE
Infineon Technologies
IC SRAM 2MBIT PARALLEL 44TSOP II
CY7C1360C-200AXCT
CY7C1360C-200AXCT
Infineon Technologies
IC SRAM 9MBIT PARALLEL 100TQFP
CY7C1373KV33-133AXI
CY7C1373KV33-133AXI
Infineon Technologies
IC SRAM 18MBIT PARALLEL 100TQFP
CY39C831QN-G-EFE2
CY39C831QN-G-EFE2
Infineon Technologies
IC REG BUCK ENERGY HARVEST 40QFN