IRF9393PBF
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Infineon Technologies IRF9393PBF

Manufacturer No:
IRF9393PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF9393PBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 9.2A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V, 20V
Rds On (Max) @ Id, Vgs:13.3mOhm @ 9.2A, 20V
Vgs(th) (Max) @ Id:2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1110 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF9393PBF IRF9333PBF   IRF9392PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Discontinued at Digi-Key Discontinued at Digi-Key
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.2A (Ta) 9.2A (Ta) 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V 4.5V, 10V 10V, 20V
Rds On (Max) @ Id, Vgs 13.3mOhm @ 9.2A, 20V 19.4mOhm @ 9.2A, 10V 12.1mOhm @ 7.8A, 20V
Vgs(th) (Max) @ Id 2.4V @ 25µA 2.4V @ 25µA 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 38 nC @ 10 V 14 nC @ 4.5 V
Vgs (Max) ±25V ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 25 V 1110 pF @ 25 V 1270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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