IRF9392TRPBF
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Infineon Technologies IRF9392TRPBF

Manufacturer No:
IRF9392TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF9392TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 9.8A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V, 20V
Rds On (Max) @ Id, Vgs:12.1mOhm @ 7.8A, 20V
Vgs(th) (Max) @ Id:2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:14 nC @ 4.5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1270 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF9392TRPBF IRF9393TRPBF   IRF9332TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Last Time Buy
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.8A (Ta) 9.2A (Ta) 9.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V, 20V 10V, 20V 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.1mOhm @ 7.8A, 20V 13.3mOhm @ 9.2A, 20V 17.5mOhm @ 9.8A, 10V
Vgs(th) (Max) @ Id 2.4V @ 25µA 2.4V @ 25µA 2.4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 38 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±25V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1270 pF @ 25 V 1110 pF @ 25 V 1270 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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