IRF9310TRPBF
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Infineon Technologies IRF9310TRPBF

Manufacturer No:
IRF9310TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF9310TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 20A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:20A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:4.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:165 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:5250 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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In Stock

$1.90
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Similar Products

Part Number IRF9310TRPBF IRF9317TRPBF   IRF9410TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type P-Channel P-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 16A (Ta) 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V 6.6mOhm @ 16A, 10V 30mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.4V @ 100µA 2.4V @ 50µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 165 nC @ 10 V 92 nC @ 10 V 27 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 5250 pF @ 15 V 2820 pF @ 15 V 550 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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