IRF8714TRPBF
  • Share:

Infineon Technologies IRF8714TRPBF

Manufacturer No:
IRF8714TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF8714TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 14A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:14A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1020 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$0.83
1,009

Please send RFQ , we will respond immediately.

Similar Products

Part Number IRF8714TRPBF IRF8734TRPBF   IRF8714GTRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Active Active Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 14A (Ta) 21A (Ta) 14A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.7mOhm @ 14A, 10V 3.5mOhm @ 21A, 10V 8.7mOhm @ 14A, 10V
Vgs(th) (Max) @ Id 2.35V @ 25µA 2.35V @ 50µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 30 nC @ 4.5 V 12 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 15 V 3175 pF @ 15 V 1020 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SOIC 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

2SK209-Y(TE85L,F)
2SK209-Y(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 10V 14MA SC59
FDPF5N50TYDTU
FDPF5N50TYDTU
Fairchild Semiconductor
MOSFET N-CH 500V 5A TO220F
2SK3140-E
2SK3140-E
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IXFK88N30P
IXFK88N30P
IXYS
MOSFET N-CH 300V 88A TO264AA
IXTP1R6N100D2
IXTP1R6N100D2
IXYS
MOSFET N-CH 1000V 1.6A TO220AB
SIHF540S-GE3
SIHF540S-GE3
Vishay Siliconix
MOSFET N-CH 100V 28A D2PAK
FQPF9N50CF
FQPF9N50CF
onsemi
MOSFET N-CH 500V 9A TO220F
IPB11N03LA
IPB11N03LA
Infineon Technologies
MOSFET N-CH 25V 30A TO263-3
HAF1002-90STL-E
HAF1002-90STL-E
Renesas Electronics America Inc
MOSFET P-CH 60V 15A 4LDPAK
IXTP55N075T
IXTP55N075T
IXYS
MOSFET N-CH 75V 55A TO220AB
IXFR180N085
IXFR180N085
IXYS
MOSFET N-CH 85V 180A ISOPLUS247
SPP20N60CFDHKSA1
SPP20N60CFDHKSA1
Infineon Technologies
MOSFET N-CH 650V 20.7A TO220-3

Related Product By Brand

BAR6406WH6327XTSA1
BAR6406WH6327XTSA1
Infineon Technologies
RF DIODE PIN 150V 250MW SOT323-3
SPP04N60C3HKSA1
SPP04N60C3HKSA1
Infineon Technologies
MOSFET N-CH 650V 4.5A TO220-3
SPB80N06S2-09
SPB80N06S2-09
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
IPS1011RTRRPBF
IPS1011RTRRPBF
Infineon Technologies
IC PWR SWITCH N-CHANNEL 1:1 DPAK
BTS452RNT
BTS452RNT
Infineon Technologies
IC PWR SWITCH N-CHAN 1:1 TO252-5
CY2XL12ZXI03
CY2XL12ZXI03
Infineon Technologies
IC CLOCK GEN PLL LVDS
CY8C5365LTI-104T
CY8C5365LTI-104T
Infineon Technologies
IC MCU 32BIT 32KB FLASH 68QFN
CY89697BPFM-G-332E1
CY89697BPFM-G-332E1
Infineon Technologies
IC MCU 8BIT FFMC-8L-0.5 64LQFP
MB90351ESPMC-GS-231E1
MB90351ESPMC-GS-231E1
Infineon Technologies
IC MCU 16BIT 64KB MROM 64LQFP
MB90F362ESPMT-GE1
MB90F362ESPMT-GE1
Infineon Technologies
IC MCU 16BIT 64KB FLASH 48LQFP
MB96F387RSCPMC-GS-JAE2
MB96F387RSCPMC-GS-JAE2
Infineon Technologies
IC MCU 16BIT 416KB FLASH 120LQFP
CYBL10462-56LQXIT
CYBL10462-56LQXIT
Infineon Technologies
IC RF TXRX+MCU BLUETOOTH 56UFQFN