IRF7902PBF
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Infineon Technologies IRF7902PBF

Manufacturer No:
IRF7902PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7902PBF Datasheet
ECAD Model:
-
Description:
MOSFET 2N-CH 30V 6.4A/9.7A 8SOIC
Delivery:
Payment:
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iso45001
iso9001
iso13485

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25°C:6.4A, 9.7A
Rds On (Max) @ Id, Vgs:22.6mOhm @ 6.4A, 10V
Vgs(th) (Max) @ Id:2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:6.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:580pF @ 15V
Power - Max:1.4W, 2W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
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Similar Products

Part Number IRF7902PBF IRF7904PBF   IRF7905PBF   IRF7907PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Discontinued at Digi-Key
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V 30V 30V
Current - Continuous Drain (Id) @ 25°C 6.4A, 9.7A 7.6A, 11A 7.8A, 8.9A 9.1A, 11A
Rds On (Max) @ Id, Vgs 22.6mOhm @ 6.4A, 10V 16.2mOhm @ 7.6A, 10V 21.8mOhm @ 7.8A, 10V 16.4mOhm @ 9.1A, 10V
Vgs(th) (Max) @ Id 2.25V @ 25µA 2.25V @ 25µA 2.25V @ 25µA 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs 6.9nC @ 4.5V 11nC @ 4.5V 6.9nC @ 4.5V 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 580pF @ 15V 910pF @ 15V 600pF @ 15V 850pF @ 15V
Power - Max 1.4W, 2W 1.4W, 2W 2W 2W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO 8-SO 8-SO 8-SO

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