IRF7853PBF
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Infineon Technologies IRF7853PBF

Manufacturer No:
IRF7853PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7853PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 8.3A 8SO
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:8.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:18mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id:4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:39 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1640 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7853PBF IRF7854PBF   IRF7855PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 80 V 60 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) 10A (Ta) 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 8.3A, 10V 13.4mOhm @ 10A, 10V 9.4mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4.9V @ 100µA 4.9V @ 100µA 4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V 41 nC @ 10 V 39 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 25 V 1620 pF @ 25 V 1560 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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