IRF7842PBF
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Infineon Technologies IRF7842PBF

Manufacturer No:
IRF7842PBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7842PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 40V 18A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:18A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:5mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:50 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4500 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7842PBF IRF7822PBF   IRF7832PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Discontinued at Digi-Key Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 18A (Ta) 18A (Ta) 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 5mOhm @ 17A, 10V 6.5mOhm @ 15A, 4.5V 4mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.25V @ 250µA 1V @ 250µA 2.32V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 4.5 V 60 nC @ 5 V 51 nC @ 4.5 V
Vgs (Max) ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 20 V 5500 pF @ 16 V 4310 pF @ 15 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 3.1W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 155°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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