IRF7811APBF
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Infineon Technologies IRF7811APBF

Manufacturer No:
IRF7811APBF
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7811APBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 28V 11A 8SO
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):28 V
Current - Continuous Drain (Id) @ 25°C:11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V
Rds On (Max) @ Id, Vgs:10mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:26 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1760 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SO
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number IRF7811APBF IRF7811AVPBF  
Manufacturer Infineon Technologies Infineon Technologies
Product Status Obsolete Discontinued at Digi-Key
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 28 V 30 V
Current - Continuous Drain (Id) @ 25°C 11A (Ta) 10.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V 4.5V
Rds On (Max) @ Id, Vgs 10mOhm @ 11A, 10V 14mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 26 nC @ 4.5 V 26 nC @ 5 V
Vgs (Max) ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1760 pF @ 15 V 1801 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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