IRF7779L2TR1PBF
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Infineon Technologies IRF7779L2TR1PBF

Manufacturer No:
IRF7779L2TR1PBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7779L2TR1PBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 375A DIRECTFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:375A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:150 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6660 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.3W (Ta), 125W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DirectFET™ Isometric L8
Package / Case:DirectFET™ Isometric L8
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Similar Products

Part Number IRF7779L2TR1PBF IRF7779L2TRPBF   IRF7799L2TR1PBF   IRF7739L2TR1PBF   IRF7749L2TR1PBF   IRF7759L2TR1PBF   IRF7769L2TR1PBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 250 V 40 V 60 V 75 V 100 V
Current - Continuous Drain (Id) @ 25°C 375A (Tc) 67A (Tc) 375A (Tc) 46A (Ta), 375A (Tc) 33A (Ta), 375A (Tc) 26A (Ta), 375A (Tc) 375A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 40A, 10V 11mOhm @ 40A, 10V 38mOhm @ 21A, 10V 1mOhm @ 160A, 10V 1.5mOhm @ 120A, 10V 2.3mOhm @ 96A, 10V 3.5mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 10 V 150 nC @ 10 V 165 nC @ 10 V 330 nC @ 10 V 300 nC @ 10 V 300 nC @ 10 V 300 nC @ 10 V
Vgs (Max) ±20V ±20V ±30V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6660 pF @ 25 V 6660 pF @ 25 V 6714 pF @ 25 V 11880 pF @ 25 V 12320 pF @ 25 V 12222 pF @ 25 V 11560 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 3.3W (Ta), 125W (Tc) 3.3W (Ta), 125W (Tc) 4.3W (Ta), 125W (Tc) 3.8W (Ta), 125W (Tc) 3.3W (Ta), 125W (Tc) 3.3W (Ta), 125W (Tc) 3.3W (Ta), 125W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8
Package / Case DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8 DirectFET™ Isometric L8

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