IRF7707
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Infineon Technologies IRF7707

Manufacturer No:
IRF7707
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7707 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 7A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:22mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:2361 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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Similar Products

Part Number IRF7707 IRF7807   IRF7607   IRF7700   IRF7701   IRF7702   IRF7703   IRF7704   IRF7705   IRF7706  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel N-Channel N-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 20 V 12 V 12 V 40 V 40 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 8.3A (Ta) 6.5A (Ta) 8.6A (Tc) 10A (Tc) 8A (Tc) 6A (Ta) 4.6A (Ta) 8A (Tc) 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V 2.5V, 4.5V 2.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 4.5V 25mOhm @ 7A, 4.5V 30mOhm @ 6.5A, 4.5V 15mOhm @ 8.6A, 4.5V 11mOhm @ 10A, 4.5V 14mOhm @ 8A, 4.5V 28mOhm @ 6A, 10V 46mOhm @ 4.6A, 10V 18mOhm @ 8A, 10V 22mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 3V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 4.5 V 17 nC @ 5 V 22 nC @ 5 V 89 nC @ 5 V 100 nC @ 4.5 V 81 nC @ 4.5 V 62 nC @ 4.5 V 38 nC @ 4.5 V 88 nC @ 10 V 72 nC @ 10 V
Vgs (Max) ±12V ±12V ±12V ±12V ±8V ±8V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2361 pF @ 15 V - 1310 pF @ 15 V 4300 pF @ 15 V 5050 pF @ 10 V 3470 pF @ 10 V 5220 pF @ 25 V 3150 pF @ 25 V 2774 pF @ 25 V 2211 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 1.5W (Ta) 2.5W (Ta) 1.8W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Ta) 1.5W (Tc) 1.51W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-SO Micro8™ 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-SOIC (0.154", 3.90mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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