IRF7706TR
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Infineon Technologies IRF7706TR

Manufacturer No:
IRF7706TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7706TR Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 7A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:22mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2211 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.51W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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Similar Products

Part Number IRF7706TR IRF7726TR   IRF7707TR   IRF7606TR   IRF7700TR   IRF7701TR   IRF7702TR   IRF7703TR   IRF7704TR   IRF7705TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 30 V 20 V 12 V 12 V 40 V 40 V 30 V
Current - Continuous Drain (Id) @ 25°C 7A (Ta) 7A (Ta) 7A (Ta) 3.6A (Ta) 8.6A (Tc) 10A (Tc) 8A (Tc) 6A (Ta) 4.6A (Ta) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 2.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 7A, 10V 26mOhm @ 7A, 10V 22mOhm @ 7A, 4.5V 90mOhm @ 2.4A, 10V 15mOhm @ 8.6A, 4.5V 11mOhm @ 10A, 4.5V 14mOhm @ 8A, 4.5V 28mOhm @ 6A, 10V 46mOhm @ 4.6A, 10V 18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 3V @ 250µA 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V 69 nC @ 10 V 47 nC @ 4.5 V 30 nC @ 10 V 89 nC @ 5 V 100 nC @ 4.5 V 81 nC @ 4.5 V 62 nC @ 4.5 V 38 nC @ 4.5 V 88 nC @ 10 V
Vgs (Max) ±20V ±20V ±12V ±20V ±12V ±8V ±8V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2211 pF @ 25 V 2204 pF @ 25 V 2361 pF @ 15 V 520 pF @ 25 V 4300 pF @ 15 V 5050 pF @ 10 V 3470 pF @ 10 V 5220 pF @ 25 V 3150 pF @ 25 V 2774 pF @ 25 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 1.51W (Ta) 1.79W (Ta) 1.5W (Ta) 1.8W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Ta) 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP Micro8™ 8-TSSOP Micro8™ 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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