IRF7705
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Infineon Technologies IRF7705

Manufacturer No:
IRF7705
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7705 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 8A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:18mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2774 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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Similar Products

Part Number IRF7705 IRF7706   IRF7707   IRF7700   IRF7701   IRF7702   IRF7703   IRF7704  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V 20 V 12 V 12 V 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 7A (Ta) 7A (Ta) 8.6A (Tc) 10A (Tc) 8A (Tc) 6A (Ta) 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 2.5V, 4.5V 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V 22mOhm @ 7A, 10V 22mOhm @ 7A, 4.5V 15mOhm @ 8.6A, 4.5V 11mOhm @ 10A, 4.5V 14mOhm @ 8A, 4.5V 28mOhm @ 6A, 10V 46mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 72 nC @ 10 V 47 nC @ 4.5 V 89 nC @ 5 V 100 nC @ 4.5 V 81 nC @ 4.5 V 62 nC @ 4.5 V 38 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±12V ±12V ±8V ±8V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2774 pF @ 25 V 2211 pF @ 25 V 2361 pF @ 15 V 4300 pF @ 15 V 5050 pF @ 10 V 3470 pF @ 10 V 5220 pF @ 25 V 3150 pF @ 25 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.5W (Tc) 1.51W (Ta) 1.5W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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