IRF7702TR
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Infineon Technologies IRF7702TR

Manufacturer No:
IRF7702TR
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7702TR Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 8A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:81 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:3470 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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Similar Products

Part Number IRF7702TR IRF7703TR   IRF7704TR   IRF7705TR   IRF7706TR   IRF7707TR   IRF7700TR   IRF7701TR  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 40 V 40 V 30 V 30 V 20 V 20 V 12 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 6A (Ta) 4.6A (Ta) 8A (Tc) 7A (Ta) 7A (Ta) 8.6A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 2.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 14mOhm @ 8A, 4.5V 28mOhm @ 6A, 10V 46mOhm @ 4.6A, 10V 18mOhm @ 8A, 10V 22mOhm @ 7A, 10V 22mOhm @ 7A, 4.5V 15mOhm @ 8.6A, 4.5V 11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 3V @ 250µA 3V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 4.5 V 62 nC @ 4.5 V 38 nC @ 4.5 V 88 nC @ 10 V 72 nC @ 10 V 47 nC @ 4.5 V 89 nC @ 5 V 100 nC @ 4.5 V
Vgs (Max) ±8V ±20V ±20V ±20V ±20V ±12V ±12V ±8V
Input Capacitance (Ciss) (Max) @ Vds 3470 pF @ 10 V 5220 pF @ 25 V 3150 pF @ 25 V 2774 pF @ 25 V 2211 pF @ 25 V 2361 pF @ 15 V 4300 pF @ 15 V 5050 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.5W (Tc) 1.5W (Ta) 1.5W (Ta) 1.5W (Tc) 1.51W (Ta) 1.5W (Ta) 1.5W (Tc) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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