IRF7701GTRPBF
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Infineon Technologies IRF7701GTRPBF

Manufacturer No:
IRF7701GTRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7701GTRPBF Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 10A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:11mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:5050 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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Similar Products

Part Number IRF7701GTRPBF IRF7702GTRPBF   IRF7703GTRPBF   IRF7706GTRPBF   IRF7707GTRPBF   IRF7704GTRPBF   IRF7705GTRPBF   IRF7701TRPBF   IRF7700GTRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 12 V 40 V 30 V 20 V 40 V 30 V 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 10A (Ta) 8A (Ta) 6A (Ta) 7A (Ta) 7A (Ta) 4.6A (Ta) 8A (Ta) 10A (Ta) 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 4.5V, 10V 1.8V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 11mOhm @ 10A, 4.5V 14mOhm @ 8A, 4.5V 28mOhm @ 6A, 10V 22mOhm @ 7A, 10V 22mOhm @ 7A, 4.5V 46mOhm @ 4.6A, 10V 18mOhm @ 8A, 10V 11mOhm @ 10A, 4.5V 15mOhm @ 8.6A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 4.5 V 81 nC @ 4.5 V 62 nC @ 4.5 V 72 nC @ 10 V 47 nC @ 4.5 V 38 nC @ 4.5 V 88 nC @ 10 V 100 nC @ 4.5 V 89 nC @ 5 V
Vgs (Max) ±8V ±8V ±20V ±20V ±12V ±20V ±20V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 5050 pF @ 10 V 3470 pF @ 10 V 5220 pF @ 25 V 2211 pF @ 25 V 2361 pF @ 15 V 3150 pF @ 25 V 2774 pF @ 25 V 5050 pF @ 10 V 4300 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta) 1.51W (Ta) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta) 1.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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