IRF7700
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Infineon Technologies IRF7700

Manufacturer No:
IRF7700
Manufacturer:
Infineon Technologies
Package:
Tube
Datasheet:
IRF7700 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 8.6A 8TSSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:8.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:15mOhm @ 8.6A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:89 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:4300 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-TSSOP
Package / Case:8-TSSOP (0.173", 4.40mm Width)
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Similar Products

Part Number IRF7700 IRF7706   IRF7701   IRF7704   IRF7705   IRF7707   IRF7703   IRF7702  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 12 V 40 V 30 V 20 V 40 V 12 V
Current - Continuous Drain (Id) @ 25°C 8.6A (Tc) 7A (Ta) 10A (Tc) 4.6A (Ta) 8A (Tc) 7A (Ta) 6A (Ta) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V 1.8V, 4.5V 4.5V, 10V 4.5V, 10V 2.5V, 4.5V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 15mOhm @ 8.6A, 4.5V 22mOhm @ 7A, 10V 11mOhm @ 10A, 4.5V 46mOhm @ 4.6A, 10V 18mOhm @ 8A, 10V 22mOhm @ 7A, 4.5V 28mOhm @ 6A, 10V 14mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 3V @ 250µA 2.5V @ 250µA 1.2V @ 250µA 3V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 89 nC @ 5 V 72 nC @ 10 V 100 nC @ 4.5 V 38 nC @ 4.5 V 88 nC @ 10 V 47 nC @ 4.5 V 62 nC @ 4.5 V 81 nC @ 4.5 V
Vgs (Max) ±12V ±20V ±8V ±20V ±20V ±12V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 15 V 2211 pF @ 25 V 5050 pF @ 10 V 3150 pF @ 25 V 2774 pF @ 25 V 2361 pF @ 15 V 5220 pF @ 25 V 3470 pF @ 10 V
FET Feature - - - - - - - -
Power Dissipation (Max) 1.5W (Tc) 1.51W (Ta) 1.5W (Ta) 1.5W (Ta) 1.5W (Tc) 1.5W (Ta) 1.5W (Ta) 1.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP 8-TSSOP
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)

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