IRF7607TRPBF
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Infineon Technologies IRF7607TRPBF

Manufacturer No:
IRF7607TRPBF
Manufacturer:
Infineon Technologies
Package:
Tape & Reel (TR)
Datasheet:
IRF7607TRPBF Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 6.5A MICRO8
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:30mOhm @ 6.5A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:1310 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.8W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Micro8™
Package / Case:8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
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Similar Products

Part Number IRF7607TRPBF IRF7807TRPBF   IRF7707TRPBF   IRF7601TRPBF   IRF7603TRPBF   IRF7604TRPBF   IRF7606TRPBF  
Manufacturer Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies Infineon Technologies
Product Status Last Time Buy Obsolete Obsolete Last Time Buy Obsolete Obsolete Active
FET Type N-Channel N-Channel P-Channel N-Channel N-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V 20 V 20 V 30 V 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta) 8.3A (Ta) 7A (Ta) 5.7A (Ta) 5.6A (Ta) 3.6A (Ta) 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V 2.5V, 4.5V 2.7V, 4.5V 4.5V, 10V 2.7V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 6.5A, 4.5V 25mOhm @ 7A, 4.5V 22mOhm @ 7A, 4.5V 35mOhm @ 3.8A, 4.5V 35mOhm @ 3.7A, 10V 90mOhm @ 2.4A, 4.5V 90mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1V @ 250µA 1.2V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA 700mV @ 250µA (Min) 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 17 nC @ 5 V 47 nC @ 4.5 V 22 nC @ 4.5 V 27 nC @ 10 V 20 nC @ 4.5 V 30 nC @ 10 V
Vgs (Max) ±12V ±12V ±12V ±12V ±20V ±12V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1310 pF @ 15 V - 2361 pF @ 15 V 650 pF @ 15 V 520 pF @ 25 V 590 pF @ 15 V 520 pF @ 25 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.8W (Ta) 2.5W (Ta) 1.5W (Ta) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta) 1.8W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package Micro8™ 8-SO 8-TSSOP Micro8™ Micro8™ Micro8™ Micro8™
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-SOIC (0.154", 3.90mm Width) 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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